Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (0 0 1) substrates

Autor: Poydenot, V. a, *, Dujardin, R. a, Fournel, F. b, Rouvière, J.L. a, Barski, A. a
Zdroj: In Journal of Crystal Growth 2005 278(1):83-87
Databáze: ScienceDirect