Photoluminescence properties of Be-doped GaAs/(Al [formula omitted]Ga [formula omitted]) [formula omitted]In [formula omitted]P heterostructures subjected to annealing processes
Autor: | Méndez-García, V.H. *, García-Motolinía, J.F., Esparza-García, A.E., Hernández, I.C. |
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Zdroj: | In Journal of Crystal Growth 2005 278(1):585-590 |
Databáze: | ScienceDirect |
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