Photoluminescence properties of Be-doped GaAs/(Al [formula omitted]Ga [formula omitted]) [formula omitted]In [formula omitted]P heterostructures subjected to annealing processes

Autor: Méndez-García, V.H. *, García-Motolinía, J.F., Esparza-García, A.E., Hernández, I.C.
Zdroj: In Journal of Crystal Growth 2005 278(1):585-590
Databáze: ScienceDirect