MBE growth, photoluminescence and lasing properties of tensile-strained GaAs/GaSbAs QD nanostructures

Autor: Ivanov, S.V. *, Lyublinskaya, O.G., Toropov, A.A., Solov’ev, V.A., Semenov, A.N., Terent’ev, Ya.V., Meltser, B.Ya., Sitnikova, A.A., Thonke, K., Sauer, R., Kop’ev, P.S.
Zdroj: In Journal of Crystal Growth 2005 275(1):e2321-e2326
Databáze: ScienceDirect