Pendeoepitaxy of GaAs and In 0.15Ga 0.85As using laterally oxidized GaAs/Al 0.96Ga 0.04As templates
Autor: | Cederberg, J.G. *, Waldrip, K.E., Peake, G.M. |
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Zdroj: | In Journal of Crystal Growth 2004 272(1):588-595 |
Databáze: | ScienceDirect |
Externí odkaz: |