Pendeoepitaxy of GaAs and In 0.15Ga 0.85As using laterally oxidized GaAs/Al 0.96Ga 0.04As templates

Autor: Cederberg, J.G. *, Waldrip, K.E., Peake, G.M.
Zdroj: In Journal of Crystal Growth 2004 272(1):588-595
Databáze: ScienceDirect