Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy
| Autor: | Huang, J.H. *, Hsieh, K.Y., Tsai, J.K., Huang, H.L., Hsieh, C.H., Lee, Y.C., Chuang, K.L., Lo, Ikai, Tu, L.W. |
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| Zdroj: | In Journal of Crystal Growth 1 March 2004 263(1-4):301-307 |
| Databáze: | ScienceDirect |
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