Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates
| Autor: | Nishio, Johji *, Hasegawa, Mitsuru, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2003 258(1):113-122 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect