Formation of thin GaN layer on Si (1 1 1) for fabrication of high-temperature metal field effect transistors (MESFETs)
| Autor: | Yoshida, Seikoh *, Li, Jiang, Takehara, Hironari, Wada, Takahiro |
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| Zdroj: | In Journal of Crystal Growth 2003 253(1):85-88 |
| Databáze: | ScienceDirect |
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