Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer

Autor: Rotella, P., Raghavan, S., Stintz, A., Fuchs, B., Krishna, S. *, Morath, C., Le, D., Kennerly, S.W.
Zdroj: In Journal of Crystal Growth 2003 251(1):787-793
Databáze: ScienceDirect