Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(0 0 1)

Autor: Hasegawa, Shigehiko *, Suekane, Osamu, Takata, Masahiro, Nakashima, Hisao
Zdroj: In Journal of Crystal Growth 2003 251(1):161-165
Databáze: ScienceDirect