Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2O 3(Gd 2O 3) as gate dielectric
| Autor: | Yang, B *, Ye, P.D, Kwo, J, Frei, M.R, Gossmann, H.-J.L, Mannaerts, J.P, Sergent, M, Hong, M, Ng, K, Bude, J |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2003 251(1):837-842 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect