Optical properties of the ZnSe/GaAs heteroepitaxial layers grown by hot wall epitaxy

Autor: Jeong, T.S. *, Yu, P.Y., Hong, K.J., Kim, T.S., Youn, C.J., Choi, Y.D., Lee, K.S., O, B., Yoon, M.Y.
Zdroj: In Journal of Crystal Growth 2003 249(1):9-14
Databáze: ScienceDirect