Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

Autor: Bulaev, P.V. *, Marmalyuk, A.A., Padalitsa, A.A., Nikitin, D.B., Zalevsky, I.D., Kapitonov, V.A., Nikolaev, D.N., Pikhtin, N.A., Lyutetskiy, A.V., Tarasov, I.S.
Zdroj: In Journal of Crystal Growth 2003 248:114-118
Databáze: ScienceDirect