Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates
| Autor: | Haffouz, S. *, Grzegorczyk, A., Hageman, P.R., Vennégu≐s, P., van der Drift, E.W.J.M., Larsen, P.K. |
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| Zdroj: | In Journal of Crystal Growth 2003 248:568-572 |
| Databáze: | ScienceDirect |
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