Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy
| Autor: | Yamaguchi, S. *, Iwamura, Y., Watanabe, Y., Kosaki, M., Yukawa, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2003 248:503-506 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect