Growth and characterization of low defect GaN by hydride vapor phase epitaxy
| Autor: | Xu, Xueping *, Vaudo, R.P, Loria, C, Salant, A, Brandes, G.R, Chaudhuri, J |
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| Zdroj: | In Journal of Crystal Growth 2002 246(3):223-229 |
| Databáze: | ScienceDirect |
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