Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy
Autor: | Zhang, R, Yoon, S.F *, Tan, K.H, Sun, Z.Z, Huang, Q.F |
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Zdroj: | In Journal of Crystal Growth 2002 243(1):41-46 |
Databáze: | ScienceDirect |
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