Structural analysis of Si-doped AlGaN/GaN multi-quantum wells
| Autor: | Nakamura, Tetsuya *, Mochizuki, Shingo, Terao, Shinji, Sano, Tomoaki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu |
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| Zdroj: | In Journal of Crystal Growth 2002 237 Part 2:1129-1132 |
| Databáze: | ScienceDirect |
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