Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition
| Autor: | Nakahata, Takumi *, Yamamoto, Kazuma, Maruno, Shigemitsu, Inagaki, Toru, Sugihara, Kohei, Abe, Yuji, Miyamoto, Atushi, Ozeki, Tatsuo |
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| Zdroj: | In Journal of Crystal Growth 2001 233(1):82-87 |
| Databáze: | ScienceDirect |
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