Nitrogen incorporation into GaAs(N), Al 0.3Ga 0.7As(N) and In 0.15Ga 0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine
| Autor: | Maclean, J.O. *, Wallis, D.J., Martin, T., Houlton, M.R., Simons, A.J. |
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| Zdroj: | In Journal of Crystal Growth 2001 231(1):31-40 |
| Databáze: | ScienceDirect |
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