Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations

Autor: Muižnieks, A., Raming, G. *, Mühlbauer, A., Virbulis, J., Hanna, B., Ammon, W.v.
Zdroj: In Journal of Crystal Growth 2001 230(1):305-313
Databáze: ScienceDirect