GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics

Autor: Schwegler, V., Schad, S.S., Scherer, M., Kamp, M. *, Ulu, G., Emsley, M., Ünlü, M.S., Lell, A., Bader, S., Hahn, B., Lugauer, H.J., Kühn, F., Weimar, A., Härle, V.
Zdroj: In Journal of Crystal Growth 2001 230(3):512-516
Databáze: ScienceDirect
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