Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC
| Autor: | Baur, J. *, Strauss, U., Bruederl, G., Eisert, D., Oberschmid, R., Hahn, B., Lugauer, H.-J., Bader, S., Zehnder, U., Fehrer, M., Härle, V. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2001 230(3):507-511 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect