Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
| Autor: | Paskova, T. *, Valcheva, E., Birch, J., Tungasmita, S., Persson, P.-O.Å., Paskov, P.P., Evtimova, S., Abrashev, M., Monemar, B. |
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| Zdroj: | In Journal of Crystal Growth 2001 230(3):381-386 |
| Databáze: | ScienceDirect |
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