Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth

Autor: Bogdanov, M.V., Galyukov, A.O., Karpov, S.Yu., Kulik, A.V., Kochuguev, S.K., Ofengeim, D.Kh., Tsiryulnikov, A.V., Ramm, M.S., Zhmakin, A.I., Makarov, Yu.N. *
Zdroj: In Journal of Crystal Growth May 2001 225(2-4):307-311
Databáze: ScienceDirect