Growth and layer structure optimization of 2.26 μm (AlGaIn)(AsSb) diode lasers for room temperature operation
Autor: | Simanowski, S *, Mermelstein, C, Walther, M, Herres, N, Kiefer, R, Rattunde, M, Schmitz, J, Wagner, J, Weimann, G |
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Zdroj: | In Journal of Crystal Growth 2001 227:595-599 |
Databáze: | ScienceDirect |
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