Growth and layer structure optimization of 2.26 μm (AlGaIn)(AsSb) diode lasers for room temperature operation

Autor: Simanowski, S *, Mermelstein, C, Walther, M, Herres, N, Kiefer, R, Rattunde, M, Schmitz, J, Wagner, J, Weimann, G
Zdroj: In Journal of Crystal Growth 2001 227:595-599
Databáze: ScienceDirect