Physical properties of InN with the band gap energy of 1.1 eV

Autor: Inushima, T *, Mamutin, V.V, Vekshin, V.A, Ivanov, S.V, Sakon, T, Motokawa, M, Ohoya, S
Zdroj: In Journal of Crystal Growth 2001 227:481-485
Databáze: ScienceDirect