Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Autor: | Zheng, L.X., Xie, M.H. *, Xu, S.J., Cheung, S.H., Tong, S.Y. |
---|---|
Zdroj: | In Journal of Crystal Growth 2001 227:376-380 |
Databáze: | ScienceDirect |
Externí odkaz: |