Interfacial thermal resistance between mechanically exfoliated nm-thick MoS2 and silicon from −60 °C to 50 °C based on ns-ET Raman technique

Autor: Li, Cichun, Peng, Jinhao, Ou, Jiayi, Wang, Tianyu, Xie, Yangsu
Zdroj: In International Journal of Heat and Mass Transfer 1 September 2024 229
Databáze: ScienceDirect