Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape

Autor: Masuda, Y., Suzuki, A., Mikawa, Y., Kagamitani, Y., Ishiguro, T., Yokoyama, C., Tsukada, T.
Zdroj: In International Journal of Heat and Mass Transfer 2010 53(5):940-943
Databáze: ScienceDirect