Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N 2O plasma ambient
| Autor: | Sun, J.C., Liang, H.W., Zhao, J.Z., Bian, J.M., Feng, Q.J., Hu, L.Z., Zhang, H.Q., Liang, X.P., Luo, Y.M., Du, G.T. |
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| Zdroj: | In Chemical Physics Letters 2008 460(4):548-551 |
| Databáze: | ScienceDirect |
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