Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
| Autor: | Zhang, Xufang, Matsumoto, Tsubasa, Nakano, Yuta, Noguchi, Hitoshi, Kato, Hiromitsu, Makino, Toshiharu, Takeuchi, Daisuke, Ogura, Masahiko, Yamasaki, Satoshi, Nebel, Christoph E., Inokuma, Takao, Tokuda, Norio |
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| Zdroj: | In Carbon 30 April 2021 175:615-619 |
| Databáze: | ScienceDirect |
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