Gate-enhanced photocurrent of (6,5) single-walled carbon nanotube based field effect transistor

Autor: Park, Ki Hong a, Lee, Seung-Hoon a, Toshimitsu, Fumiyuki b, Lee, Jihoon a, Park, Sung Heum a, Tsuyohiko, Fujigaya b, c, Jang, Jae-Won a, ∗
Zdroj: In Carbon November 2018 139:709-715
Databáze: ScienceDirect