Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy

Autor: Tabata, A., Benyattou, T., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.
Zdroj: In Semiconductor Materials Analysis and Fabrication Process Control 1993:182-186
Databáze: ScienceDirect