Properties of silicon implanted with boron ions through thermal silicon dioxide: L. O. Bauer, M. R. Macpherson, A. T. Robinson and H. G. Dill. Solid St. Electron.16 (1973), p. 289

Zdroj: In Microelectronics Reliability October 1973 12(4):278-278
Databáze: ScienceDirect
Externí odkaz: