High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy
Autor: | Yan, Chunhui, Sun, Dianzhao, Guo, Hongxi, Li, Xiaobing, Zu, Shirong, Huang, Yunheng, Zheng, Yiping, Kong, Meiying |
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Zdroj: | In Journal of Crystal Growth 1994 136(1):306-309 |
Databáze: | ScienceDirect |
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