High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

Autor: Yan, Chunhui, Sun, Dianzhao, Guo, Hongxi, Li, Xiaobing, Zu, Shirong, Huang, Yunheng, Zheng, Yiping, Kong, Meiying
Zdroj: In Journal of Crystal Growth 1994 136(1):306-309
Databáze: ScienceDirect