| Autor: |
Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan C. Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 9, Iss 10, Pp 101105-101105-8 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0062056 |
| Popis: |
Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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