| Autor: |
Minseob Shim, Kyoungho Lee, Jonghyun Kim, Kihyun Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 10, Pp 46408-46417 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2022.3169764 |
| Popis: |
Wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent years, because WBG devices can achieve fast switching frequencies and improved temperature variation reliability with better characteristics. However, this fast-switching operation can cause a substantial drain-source voltage ( $V_{\mathrm {DS}}$ ), which can damage the WBG switch device in the short-circuit state because the gate driver turns off the device extremely quickly, resulting in a substantial $\Delta I / \Delta t$ owing to the large drain current. Therefore, this study presents a multi-step soft turn-off time control method capable of changing the turn-off time according to the $V_{\mathrm {DS}}$ variation using one external capacitor and simple control blocks. The proposed multi-step soft turn-off method suppresses the $V_{\mathrm {DS}}$ variation under the setup voltage regardless of changes in the operating conditions and device characteristics by using a simple structure. An entire control block fabricated using a 180 nm BCDMOS process achieved real-time $V_{\mathrm {DS}}$ sensing with only one external capacitor to control the number of ON/OFF MOSFETs for the 9-level soft turn-off operation and suppressed the $\Delta V_{\mathrm {DS}}$ voltage under 60 V with a 1200V/25A SiC MOSFET power module. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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