| Autor: |
Abdelhek Amri, Louiza Arab, Afek Meftah, Aya Latif |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Results in Optics, Vol 11, Iss , Pp 100426- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2666-9501 |
| DOI: |
10.1016/j.rio.2023.100426 |
| Popis: |
The structural, morphological, optical, and electrical properties of Al-doped ZnO thin films annealed under thermal shock conditions were studied. The films were prepared using the sol–gel method and deposited on glass substrates by dip-coating technique. The effects of varying the concentration of aluminum (Al) were analyzed using X-ray Diffraction (XRD), scanning electron microscope (SEM), UV–Vis, and the 4-point probe method. The XRD data demonstrated a degradation in the crystalline structure of the films and the emergence of other preferred directions (100) and (101), which supported the creation of a hexagonal wurtzite structure. The SEM images supported the findings of the XRD analysis. The best electrical and optical performance was obtained for an Al concentration of 1 at%, where the resistivity value was 0.191 Ω.cm and the band gap was 3.26 eV, with a high transmittance greater than 90%.The findings of this study render the developed thin-film architecture a viable candidate for high-performance optoelectronic applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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