Electron Velocity Enhancement in Polarization-doped AlGaN

Autor:	Linas ARDARAVIČIUS, Oleg KIPRIJANOVIČ, Juozapas LIBERIS
Jazyk:	angličtina
Rok vydání:	2013
Předmět:	graded AlGaN/GaN current-voltage dependence polarization doping high electric fields electron drift velocity Mining engineering. Metallurgy TN1-997
Zdroj:	Medžiagotyra, Vol 19, Iss 2, Pp 129-133 (2013)
Druh dokumentu:	article
ISSN:	1392-1320 2029-7289
DOI:	10.5755/j01.ms.19.2.1797
Popis:	Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of polarization bulk doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally through nanosecond-pulsed measurements. The measured current-voltage dependences were used to determine drift velocity data assuming no change in electron density upon applied electric field. The velocity results are compared with that of GaN and ungraded AlGaN/GaN. Also, experimental results are compared with those of Monte Carlo simulation.DOI: http://dx.doi.org/10.5755/j01.ms.19.2.1797
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/ffba55f1875043f2bbc540586b966e0d Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF