| Autor: |
Benjamin I. Weintrub, Yu-Ling Hsieh, Sviatoslav Kovalchuk, Jan N. Kirchhof, Kyrylo Greben, Kirill I. Bolotin |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 13, Iss 1, Pp 1-6 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-022-34158-z |
| Popis: |
The application of electric fields >1 V/nm in solid state devices could provide access to unexplored phenomena, but it is currently difficult to implement. Here, the authors develop a double-sided ionic liquid gating technique to generate electric fields as large as 4 V/nm across few-layer WSe2, leading to field-induced semiconductor-to-metal transitions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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