| Autor: |
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Crystals, Vol 12, Iss 9, p 1301 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst12091301 |
| Popis: |
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphological and electrical characterizations in which the devices showed good electronic performance, such as high mobility and high Ion/Ioff ratios exceeding 104. The subthreshold swing (ss) was somewhat high in all devices owing to the dimensions of our devices. In addition, the transfer curves showed good controllability as a function of gate voltage. The photogating effect was weakened in MoSe2/SiN/Si, indicating that SiN is a good alternative to silicon oxide as a gate dielectric material. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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