Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example

Autor: G. Z. Xing, Y. H. Lu, Y. F. Tian, J. B. Yi, C. C. Lim, Y. F. Li, G. P. Li, D. D. Wang, B. Yao, J. Ding, Y. P. Feng, T. Wu
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: AIP Advances, Vol 1, Iss 2, Pp 022152-022152-14 (2011)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/1.3609964
Popis: To shed light on the mechanism responsible for the weak ferromagnetism in undoped wide band gap oxides, we carry out a comparative study on ZnO thin films prepared using both sol-gel and molecular beam epitaxy (MBE) methods. Compared with the MBE samples, the sol-gel derived samples show much stronger room temperature ferromagnetism with a magnetic signal persisting up to ∼740 K, and this ferromagnetic order coexists with a high density of defects in the form of zinc vacancies. The donor-acceptor pairs associated with the zinc vacancies also cause a characteristic orange-red photoluminescence in the sol-gel films. Furthermore, the strong correlation between the ferromagnetism and the zinc vacancies is confirmed by our first-principles density functional theory calculations, and electronic band alteration as a result of defect engineering is proposed to play the critical role in stabilizing the long-range ferromagnetism.
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