Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Autor:	Heecheol Shin, Hyobin Choi, Jaeseong Lim, Wanggon Lee, Kumar Mohit, Younsoo Kim, Hyung-Suk Jung, Hanjin Lim, Hyungtak Seo
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	Zirconium oxide high-k dielectric atomic layer deposition interfacial properties metal-insulator-metal capacitor Clay industries. Ceramics. Glass TP785-869
Zdroj:	Journal of Asian Ceramic Societies, Vol 10, Iss 3, Pp 649-659 (2022)
Druh dokumentu:	article
ISSN:	21870764 2187-0764
DOI:	10.1080/21870764.2022.2101216
Popis:	The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. As the dimensions of stacked insulating dielectric and metal electrodes in the MIM capacitor are currently
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/fe985d0725ef46d9bb15591c864e499e Zobrazit plný text záznamu View record in DOAJ