Atomic structure and mechanical response of coincident stacking faults in boron suboxide

Autor:	Kolan Madhav Reddy, Pan Liu, Yidi Shen, Takeshi Goto, Qi An, M. W. Chen
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	Boron suboxide transmission electron microscopy stacking fault shear amorphization mechanical behavior Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Materials Research Letters, Vol 7, Iss 2, Pp 75-81 (2019)
Druh dokumentu:	article
ISSN:	2166-3831 21663831
DOI:	10.1080/21663831.2018.1556184
Popis:	We report the atomic structure of coincident stacking faults (SFs) in superhard boron suboxide (B6O) by combining annular bright field scanning transmission electron microscopy and quantum mechanics (QM) simulations. Different from simple SFs, which only lead to the symmetry breaking, the coincident SF junctions in the complex B6O result in local chemical configuration changes by forming an abnormal three-oxygen-atoms chain linking boron icosahedra, instead of the regular two-oxygen-atoms chain in a perfect B6O crystal. QM studies demonstrate that coincident SFs lead to the decreased shear strength under pure shear and indentation conditions and are responsible to the initial failure and amorphization of B6O.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/fe3e7ba7cf944602a84afc537b3eb9a6 Zobrazit plný text záznamu View record in DOAJ