| Autor: |
Joel Davidsson, Viktor Ivády, Rickard Armiento, N T Son, Adam Gali, Igor A Abrikosov |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 20, Iss 2, p 023035 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/aaa752 |
| Popis: |
Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. In multi-component semiconductors point defects often exhibit several non-equivalent configurations of similar but different characteristics. The most relevant example of such point defect is the divacancy in silicon carbide, where some of the non-equivalent configurations implement room temperature qubits. Here, we identify four different configurations of the divacancy in 4H–SiC via the comparison of experimental measurements and results of first-principle calculations. In order to accomplish this challenging task, we carry out an exhaustive numerical accuracy investigation of zero-phonon line and hyperfine coupling parameter calculations. Based on these results, we discuss the possibility of systematic quantum bit search. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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