Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

Autor:	Andrey G. Petrov, Ivan I. Shvetsov-Shilovskiy, Sergey B. Shmakov, Anastasia V. Ulanova, Anna B. Boruzdina
Jazyk:	English<br />Russian
Rok vydání:	2022
Předmět:	resistive memory heavy ions total dose non-volatile memory chip. Information technology T58.5-58.64 Information theory Q350-390
Zdroj:	Безопасность информационных технологий, Vol 29, Iss 2, Pp 100-111 (2022)
Druh dokumentu:	article
ISSN:	2074-7128 2074-7136
DOI:	10.26583/bit.2022.2.08
Popis:	The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. A comparative assessment of typical radiative hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory was provided in this study. The main advantages and disadvantages of using various technologies for the manufacture of non-volatile memory microcircuits with increased resistance to ionizing effects are described.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/fd8fbafe5cf54f69b67c6260e0801268 Zobrazit plný text záznamu View record in DOAJ