| Autor: |
Alexey N. Mihalyuk, Leonid V. Bondarenko, Alexandra Y. Tupchaya, Yuriy E. Vekovshinin, Tatyana V. Utas, Dimitry V. Gruznev, Jyh-Pin Chou, Sergey V. Eremeev, Andrey V. Zotov, Alexander A. Saranin |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Materials Today Advances, Vol 18, Iss , Pp 100372- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2590-0498 |
| DOI: |
10.1016/j.mtadv.2023.100372 |
| Popis: |
The quantum effects confined in the ultimate two-dimensional limit are able to address the challenges and provide advances in high-performance spintronic devices. In the paper we show a successful strategy to enrich the electronic properties of thallene, a new honeycomb analogue of graphene, through the interface engineering, which opens a great potential of thallene as an advanced spintronics material. While the thallene has been experimentally realized recently on NiSi2/Si(111) substrate, there remains a lack of attractive electronic properties due to the strong thallene-substrate coupling. This challenge is addressed here through the decoration of thallene/NiSi2 interface by Sn interlayer, which allows to eliminate the thallene-substrate coupling and produce a high-quality large-scale thallene monolayer with exotic electron bands demonstrating colossal spin-polarization just above the Fermi level. It is demonstrated that appropriate electron doping or external electric field are enable the spin-transport regime. The discovered band structure regulation boosts the functionality of the 2D-Tl Xene and makes it a highly attractive material for spintronics applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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