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Abstract. Considered the problems that do not allow to fully realize the enormous potential of application of indium phosphide and gallium arsenide in solid-state electronics.The classical and modern results of the thermal oxidation of AIIIBV semiconductors with consideration of process stimulation by photon processing, magnetic pulses, etc. are analyzed and generalized. Particular attention is paid to the fundamental approach to solving the problem of the formation of nanoscale functional fi lms on AIIIBV, consisting in the use of reasonably selected chemical stimulators introduced into the system in various ways with the aim of changing the mechanism of the thermal oxidation process of semiconductors to chemical stimulated. This ensures the occurrence of new interface reactions with kinetically conjugated and heterogeneously catalytic stages, which in a single process allows: 1) to block the negative communication channel between the reactions of componentwise oxidation under thermal oxidation of pure AIIIBV; 2) acceleration of the fi lms formation in comparison with the process of pure AIIIBVoxidation, including branching through the products of the chemical stimulator conversion; 3) lowering the operating parameters of the process (temperature, time) and preventing degradation of the fi lms; 4) purposeful changes in the composition and properties of the nanoscale fi lms with the achievement of target characteristics. Deposited on the GaAs and InP surface nanoscale layers of d-metals (Ni, Co, and V) have a purposeful multifunctional effect on the composition and properties of the formed fi lms, changing the mechanism of the thermal oxidation of semiconductors from mechanism of pure AIIIBV oxidation to transit or catalytic. Effective kinetic and chemical blocking of the negative communication channel between the stages of pure InP and GaAs oxidationby used of a chemical stimulator prevents the diffusion of unoxidized indium into fi lms (0.3-0.5 % In versus 17 % native oxide, LE, XRD, IRS, USXRES data), segregation arsenic at the inner interface (the content of As in the form of As2O3, As2O5, [AsO4]3- increases 2-5 times XRD, IRS, and USXRES data) and provides the formation of nanoscale fi lms with semiconductor and dielectric characteristics (electrical strength up to 7 × 106 V/cm). |
