Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping
| Autor: | Ruixing Feng, Felipe Kremer, David J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris J. Glover, Scott A. Medling, John Lundsgaard Hansen, Arne Nylandsted-Larsen, Salvy P. Russo, Mark C. Ridgway |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Materials Research Letters, Vol 5, Iss 1, Pp 29-34 (2017) |
| Druh dokumentu: | article |
| ISSN: | 2166-3831 21663831 |
| DOI: | 10.1080/21663831.2016.1169229 |
| Popis: | In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples. |
| Databáze: | Directory of Open Access Journals |
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