| Autor: |
Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 5, Iss 1, Pp 017109-017109-11 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4905781 |
| Popis: |
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < EC − ET) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward EC, and DIT at EC was significantly higher than the value at the conventionally evaluated energies (EC − ET = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to DIT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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